DURHAM, N.C. — Cree Inc. here today announced availability of 3-inch diameter n-type 4H silicon-carbide (SiC) wafer substrates for production of radio-frequency (RF) and microwave devices. Compared to ...
Cree, Inc. announces its latest silicon carbide (SiC) offering with low basal plane dislocation (LBPD) 100-mm 4H SiC epitaxial wafers. Cree, Inc. announces its latest silicon carbide (SiC) offering ...
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