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Halogen-free plasma technique achieves atomic-level etching of hafnium oxide for next-gen semiconductors
Hafnium oxide (HfO 2) has attracted attention as a promising material for ultrathin semiconductors and other microelectronic devices. The strong ionic bond between hafnium and oxygen atoms in HfO 2 ...
The integration of in situ argon plasma annealing results in improved film density, stoichiometry, and crystallinity. These findings are significant for industries looking for cost-effective, ...
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