The basic construction of Bipolar Junction Transistor (BJT) comprises of two P-N junctions producing three connecting terminals with each terminal being given a name to identify it from the other two.

Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base–emitter junction is made of a high-bandgap semiconductor and the ...

Solid-state device technologies, which are available to the amplifier designer, fall, broadly, into three categories: bipolar junction transistors (BJTs) and junction diodes; junction field effect ...

This issue arose in the present study, as seen from the current–voltage characteristics of the BC and base–emitter (BE) junctions at 300 K (Fig. 1b). Rectifying behaviour indicates Schottky diodes are ...