The operation of field‐effect transistors (FETs) critically depends on the performance of gate dielectrics, which act as the insulating medium between the gate electrode and the semiconducting channel ...

Herein, wafer-scale 8-nm films of Sn-doped gallium oxide (Ga 2 O 3) were fabricated via physical vapor deposition at room temperature. Using these films, 8-nm Sn-doped Ga 2 O 3 field-effect ...

Insulated Gate Bipolar Transistor (IGBT) technologies have evolved significantly over recent decades to meet the stringent requirements of high-power and high-efficiency applications. Combining the ...

A field effect transistor (FET) is a carrier device with three terminals: source, drain, and gate. In FETs, an electric field can be applied at the terminal of the gate, modifying the conductive ...

the scaling of silicon-based metal-oxide-semiconductor field-effect transistors (Si MOSFETs) and evolution of novel structure transistors in accordance with Moore’s Law, especially for modern ...

A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure. Its excellent electron mobility, chemical and physical stability, electrical and thermal conductivity ...

Metal-oxide-semiconductor field-effect transistors (MOSFETs) have revolutionized the world of electronics due to their remarkable performance and widespread applications. The MOSFET transistor is a ...

Forbes contributors publish independent expert analyses and insights. Covering Digital Storage Technology & Market. IEEE President in 2024 This last week I had my last two public appearances as the ...

The first transistor was successfully demonstrated at Bell Laboratories in Murray Hill, New Jersey, in 1947. This three-terminal device has spawned many of the electronics devices that make possible ...

If you ever work with a circuit that controls a decent amount of current, you will often encounter a FET – a Field-Effect Transistor. Whether you want to control a couple of powerful LEDs, switch a ...