As the IC industry rapidly adopts the 16nm technology node, IC designers are faced with a new wave of reliability challenges. The 16nm node has introduced several changes in the way that the devices ...

FinFET devices were developed to address the need for improved gate control to suppress leakage current (IOFF); DIBL (drain-induced barrier lowering); and process‐induced variability below ...

As the digital semiconductor manufacturing process moves into the FinFET era, more and more front-end-of-line (FEOL) defects are observed due to extremely small feature size and complex manufacturing ...

Since the inception of the integrated-circuit (IC) industry, design metrics such as performance, power, area, cost, and time-to-market have remained the same. In fact, Moore’s law is all about ...