The double-gate (DG) FET provides a fundamental advantage over conventional single-gate (SG) FETs. In short-channel FETs the drain potential competes with that of the gate to influence the channel.

“Transistor characteristics in advanced technology nodes are strongly impacted by devices design and process integration choices. Variation in the layout and pattern configuration in close proximity ...

The semiconductor industry faces a major change in the way that ICs are made in order to keep improving performance and density, a change that has potential ramifications for design methodologies.

The next frontier in the electronics industry is the FinFET, a new type of multi-gate 3D transistor that offers tremendous power and performance advantages compared to traditional, planar transistors.

HSINCHU, Taiwan, R.O.C., Feb. 3, 2023 – TSMC today announced the launch of its “TSMC University FinFET Program,” aimed at developing future IC design talent for the industry and empowering academic ...