Currently available GaN technologies have their shortcomings. These are discussed in the following article followed by the presentation of a novel GaN technology that eliminates these shortcomings.

Part 1 of this article series on gallium nitride (GaN) fundamentals described crystal structures and the formation of the two-dimensional electron gas (2DEG), along with material figures of merit and ...

Gallium nitride is starting to make broader inroads in the lower-end of the high-voltage, wide-bandgap power FET market, where silicon carbide has been the technology of choice. This shift is driven ...

Gallium nitride (GaN) power devices are redefining the limits of switching converters by combining wide bandgap physics with lateral HEMT structures optimized for fast, low-loss operation. This ...

As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...

What's needed to fill in the gaps in understanding GaN HEMTs and their catastrophic failures. Degradation mechanisms that plague GaN HEMTs. Why overvoltage ruggedness and surge-energy withstand go ...

Researchers at Soitec and Nanyang Technological University have reported 60%+ power-added efficiency (PAE), for moderately scaled GaN-on-Si HEMTs at 30GHz operation. The devices also perform with ...

SEOUL, South Korea, Sept. 11, 2025 /PRNewswire/ -- DB HiTek, a leading 8-inch specialty foundry, today announced it is in the final stages of development of its 650V E-Mode GaN HEMT (Gallium Nitride ...

How GaN is used in DC-DC power converters. Challenges and advantages of using GaN semiconductors. When designers need high-voltage to low-voltage DC-DC converter designs, both the input and output ...

Infineon Technologies has announced a rad-hardened GaN transistor designed to operate in harsh space environments. It “is the first in-house manufactured GaN transistor to earn the highest quality ...