sciencex

Industry's first 80-V half-bridge GaN FET module

Texas Instruments today introduced the industry's first 80-V, 10-A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage prototype, which consists of a high-frequency driver and ...
Business Wire

Sensitron and EPC Collaborate to Introduce a High-Power Density 350 V Gallium Nitride (GaN) Half Bridge Intelligent Power Module (IPM) That is 60% Smaller Than Comparable ...

EL SEGUNDO, Calif.--(BUSINESS WIRE)--Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s ...

EPC2366 eGaN® FET Wins EPDT 2025 Product of the Year Award

The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...
WGN Radio

Industry-Leading 300 V Rad-Hard GaN FET for Higher Voltage Satellite Power Systems Now Available from EPC Space

The EPC7030MSH 300V RH GaN FET delivers high current and rad-hard reliability, meeting the rigorous demands of higher-voltage space power architectures and simplifying thermal design for our customers ...
EDN

TI’s 600-V integrated GaN FET and driver power stage

I have been waiting for “the other shoe to drop” regarding GaN power element evolution and so here it is. I had fully expected Texas Instruments to join the race for an integrated power element and ...
Automation World

Revolutionize High-Performance Power Conversion With TI's 600-V GaN FET Power Stage

Building on decades of power-management innovation, Texas Instruments today announced the availability of 600-V gallium nitride 70-mΩ field-effect transistor power-stage engineering samples, making TI ...
Business Wire

Transphorm and TDK-Lambda Announce Expansion of AC-DC GaN Power Module Family

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN)—a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—today confirmed ...
Electronic Design

Protective Devices and GaN Modules Help Power Data Centers

Members can download this article in PDF format. The proliferation of chatbots and other applications powered by artificial intelligence (AI) and machine learning (ML) is driving explosive growth in ...
WDTN

Ancora's Double Side Cooling GaN-FET Demonstrates Superior Robustness and Long Term Reliability for Data Center, Power Hungry AI and High Computing Power Solutions

TAIPEI, Feb. 27, 2024 /PRNewswire/ -- Ancora Semiconductor Inc. has recently passed a series of rigorous DMTBF (Demonstrated Mean Time Between Failures) tests for its double-sided cooling GaN (Gallium ...
Electronic Design

GaN FETs Redefine Power-Circuit Designs

Silicon MOSFET power transistors have been a mainstay of power-supply design for years. And while they’re still widely used, gallium-nitride (GaN) transistors are gradually replacing MOSFETs in some ...
EDN

First 80-V half-bridge GaN FET module introduced

The industry’s first 80-V, 10-A integrated gallium nitride (GaN) FET power-stage prototype, consists of a high-frequency driver and two GaN FETs in a half-bridge configuration. The power stage will ...