Teledyne e2v HiRel Announces New 100 V High-Speed 20 MHz FET and GaN Transistor Driver Flip Chip Die
MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne e2v HiRel announces the new TD99102 UltraCMOS ® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip ...
onsemi to Acquire Silicon Carbide JFET Technology to Enhance Its Power Portfolio for AI Data Centers
SCOTTSDALE, Ariz.--(BUSINESS WIRE)--onsemi (Nasdaq: ON) today announced that it has entered into an agreement to acquire the Silicon Carbide Junction Field-Effect Transistor (SiC JFET) technology ...
This file type includes high resolution graphics and schematics when applicable. Early predictions of widespread dominance were somewhat premature, but over the next several years, wide-bandgap (WBG) ...
EPC’s first seventh-generation eGaN® device enters mass production, delivering up to 3× better performance than silicon ...
In mid-2010, GaN FET technology was made available to the general power conversion engineering community when Efficient Power Conversion (EPC) introduced the industry’s first commercially available ...
Building on decades of power-management innovation, Texas Instruments today announced the availability of 600-V gallium nitride 70-mΩ field-effect transistor power-stage engineering samples, making TI ...
The performance potential of SiC is indisputable. The key challenge to be mastered is to determine which design approach achieves the biggest success in applications. Advanced design activities are ...
Editors note: This book, “GaN Transistors for Efficient Power Conversion”, published by Power Conversion Publications helped me learn a great deal more about the benefits of the GaN process as well as ...
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