There is a lot of interest in the WBG technologies such as SiC and GaN and the purpose here is to show that both Si and WBG materials (SiC and GaN) all have their place within the power industry and ...
SemIQ’s half-bridge series for data center cooling and industrial drivers includes 1-mΩ on-resistance SiC MOSFETs and ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect ...
Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...
Based on several high-power applications, we can see a clear trend of using power modules and discrete MOSFETs. There is a significant overlap between both, roughly from 10 kW to 50 kW. Modules fit ...
Since mass-production of the SiC MOSFET commenced in 2010, portfolios have expanded, often through the introduction of ...
The MarketWatch News Department was not involved in the creation of this content. ALBANY, N.Y., Feb. 25, 2026 /PRNewswire/ -- NoMIS Power Corporation, a leader in advanced Silicon Carbide (SiC) power ...
Successfully develops SiC Planar MOSFET process platform for 450V–2300V, securing high reliability and yield competitiveness Accelerates SiC-based compound semiconductor foundry business by initiating ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for automotive traction ...
Suppliers of gallium nitride (GaN) and silicon carbide (SiC) power devices are rolling out the next wave of products with some new and impressive specs. But before these devices are incorporated in ...
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