Standardized power-semiconductor chip will extend driving range and lower power costs for xEVs Mitsubishi Electric’s new power semiconductor chip is a proprietary trench SiC-MOSFET that reduces power ...

Power Integrations has announced AEC-Q100 automotive certification for a single-channel gate driver for silicon carbide (SiC) mosfets switching up to 300kW. They provide up to 8A and suit SiC ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for automotive traction ...

The silicon carbide (SiC) power semiconductor market is experiencing a sudden surge in demand amid growth for electric vehicles and other systems. But the demand also is causing a tight supply of ...

With Tesla announcing to cut the usage of SiC by 75% in its next-generation EV power platform in a bid to slim the platform's mass and costs, DIGITIMES Research believes the SiC MOSFET solution, which ...

Researchers from North Carolina State University have developed a way to design and make silicon carbide (SiC) power devices that can regulate power more effectively. The process – called PRESiCE – is ...

Silicon carbide (SiC) continues to carve out a place for itself in power electronics after decades of dominance by silicon. SiC-based power switches are becoming the gold standard in the three-phase ...

Cree, Inc. releases the industry's first fully qualified SiC MOSFET power devices in "bare die" or chip form for use in power electronics modules. Cree's SiC Z-FET MOSFETs and diodes are used in ...

In recent years, the proliferation of next-generation electric vehicles (xEVs) has been accelerating the development of smaller, lighter, and more efficient electrical systems. In particular, ...

The SiC Z-FET MOSFETs are the industry’s first fully qualified SiC MOSFET power devices in bare die or chip form for use in power electronics modules. The power modules typically combine a number of ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor ...

They provide up to 8A and suit SiC transistors handling 600-800A with standard gate-emitter voltages from +15V, with various negative voltages from -3V to -15V. Safety features include: drain to ...