KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for automotive traction ...
SiC MOSFETs are usually susceptible to damage as a result of short-circuiting events because of the fast switching speeds and low on-state resistance. 3 A team of researchers affiliated with the ...
ALBANY, N.Y., March 14, 2025 /PRNewswire/ -- NoMIS Power, a leader in advanced silicon carbide (SiC) power semiconductor technology, has announced a major breakthrough in improving the short-circuit ...
A technical paper titled “Improved Scheme for Estimating the Embedded Gate Resistance to Reproduce SiC MOSFET Circuit Performance” was published by researchers at ROHM Company. Find the technical ...
Infineon Technologies AG has extended its portfolio of isolated EiceDRIVER Enhanced gate drivers with the F3 Enhanced (1ED332x) family with short-circuit protection. These devices provide protection ...
Since mass-production of the SiC MOSFET commenced in 2010, portfolios have expanded, often through the introduction of ...
Versatile, scalable gate drivers rated for 1200 V and 1700 V applications SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (NASDAQ: POWI), the leader in gate-driver technology for medium- and ...
Wide-bandgap (WBG) power semiconductors—and silicon-carbide (SiC) devices in particular—can help significantly improve the energy efficiency and reliability of various types of power converters. These ...
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