The basic equations describing transistor behavior rely on parameters like channel doping, the capacitance of the gate oxide, and the resistance between the source and drain and the channel. And for ...

Over the past century, electronic engineering has improved massively. In the 1920s, a state-of-the-art AM radio contained several vacuum tubes, a few enormous inductors, capacitors and resistors, ...

The Calibre xRC a full-chip, transistor-level parasitic-extraction tool, addresses the performance and accuracy requirements of analog and mixed-signal SOC (system-on-chip) designs. With Calibre xRC, ...

For the first time, my colleagues and I have built a single electronic device that is capable of copying the functions of neuron cells in a brain. We then connected 20 of them together to perform a ...

Two new silicon npn planar RF transistors can serve as RF front ends for analog and digital wireless communication systems up to 3 GHz. The TSDF2005W and TSDF2020W feature a 25-GHz transition ...

High Electron Mobility Transistors (HEMTs) represent a pivotal class of devices in modern semiconductor technology, valued for their exceptional frequency performance and low noise characteristics.

Microprocessors for PCs are at the forefront of the computing industry, leading with huge nanoscale chips built in multibillion-dollar fab plants. So far, the success of the semiconductor industry has ...

R. Stanley Williams was previously employed by Hewlett Packard Enterprise and presently owns stock in the company. He has received research funding from Texas A&M University. He is member of the IEEE.