A research team has implemented a novel method to achieve epitaxial growth of 1D metallic materials with a width of less than 1 nm. The group applied this process to develop a new structure for 2D ...
The basic equations describing transistor behavior rely on parameters like channel doping, the capacitance of the gate oxide, and the resistance between the source and drain and the channel. And for ...
A team of scientists from the Institute for Basic Science has developed a revolutionary technique for producing 1D metallic materials with a width of less than 1 nm by epitaxial growth. Using this ...
NEC Corporation and NEC Electronics Corporation announced the development of a transistor featuring a new gate stack structure using a Hf-based high-k dielectric (*1) and a metal gate electrode (*2), ...
Normally, computer chips consist of electronic components that always do the same thing. In the future, however, more flexibility will be possible: New types of adaptive transistors can be dynamically ...
Graphene could be a useful material for high-performance transistors because it carries electrons faster than silicon. Since graphene transistors can’t be turned off, they’re more useful for RF ...
The CPUs of the future could use far fewer transistors as a team of researchers have developed a new, adaptive transistor design capable of changing its configuration on the fly. With these new ...
A research group at Vienna University of Technology has invented a new form of transistor that has the potential to change the manufacturing of fabbing chips. The group developed a new adaptive ...
Hot topic: Linköping's Dan Zhao and Xavier Crispin discuss the transistor. (Courtesy: Linköping University) A heat-gated transistor in which an electric current can be modulated by changing the ...
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