Researchers developed a dual-modulated vertical transistor that suppresses leakage at nanoscale channels and supports ...

After memory products like NAND Flash and DRAM, it's reported that Samsung Electronics will conduct R&D for a "3D stacking" technology that can vertically stack system semiconductor transistors.

Bernin (France), June 3, 2025 – Soitec (Euronext – Tech Leaders), a world leader in the design and production of innovative semiconductor materials, today announced a strategic collaboration with ...

Silicon chip manufacturers like Intel and TSMC are constantly outdoing themselves to make ever smaller features, but they are getting closer to the physical limits of silicon. “We already have very, ...

Artificial intelligence is colliding with a hard physical limit: the energy it takes to move data on and off chips. Training and running large models is already straining power grids and corporate ...

In the vast reaches of the semiconductor cosmos, a silent menace lurks—one that can obliterate years of design work in a fraction of a nanosecond. Electrostatic discharge (ESD) verification stands as ...

A National Taiwan University (NTU) student research paper won the semiconductor industry's prestigious IEDM's 2021 Roger A. Haken Best Student Paper Award, demonstrating capabilities of stacking eight ...

A team of Chinese researchers has built a ferroelectric transistor with a gate length of just 1 nanometer that runs on 0.6 ...

Successive versions of vertical transistors are emerging as the likely successor to finFETs, combining lower leakage with significant area reduction. A stacked nanosheet transistor, introduced at N3, ...

Main game is to stick as many floating-point (or more recently reduced integer) arithmetic units as you can to increase the number of math operations you can do in parallel. LLMs are just giant ...