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MIT's chip stacking breakthrough could cut energy use in power-hungry AI processes
Data doesn’t have to travel as far or waste as much energy when the memory and logic components are closer together.
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MIT’s chip stacking leap could slash energy use for hungry AI chips
Artificial intelligence is colliding with a hard physical limit: the energy it takes to move data on and off chips. Training ...
Bernin (France), June 3, 2025 – Soitec (Euronext – Tech Leaders), a world leader in the design and production of innovative semiconductor materials, today announced a strategic collaboration with ...
After memory products like NAND Flash and DRAM, it's reported that Samsung Electronics will conduct R&D for a "3D stacking" technology that can vertically stack system semiconductor transistors.
TOKYO, December 12, 2025--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced the development of highly stackable oxide-semiconductor channel transistors that will ...
Flexible, hydrogel-based transistors that can host living cells point to a new class of bio-integrated electronics, blurring ...
Intel's upcoming RibbonFET technology is set to debut in the company's 20A node next year, but already the chip maker is showcasing the next step: 3D stacked CMOS (complementary metal oxide ...
Kioxia Corp. announced the development of highly stackable oxide-semiconductor channel transistors that will enable the practical implementation of high-density, low-power 3D DRAM. This technology was ...
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