Researchers developed a dual-modulated vertical transistor that suppresses leakage at nanoscale channels and supports ...
After memory products like NAND Flash and DRAM, it's reported that Samsung Electronics will conduct R&D for a "3D stacking" technology that can vertically stack system semiconductor transistors.
Bernin (France), June 3, 2025 – Soitec (Euronext – Tech Leaders), a world leader in the design and production of innovative semiconductor materials, today announced a strategic collaboration with ...
Silicon chip manufacturers like Intel and TSMC are constantly outdoing themselves to make ever smaller features, but they are getting closer to the physical limits of silicon. “We already have very, ...
Artificial intelligence is colliding with a hard physical limit: the energy it takes to move data on and off chips. Training and running large models is already straining power grids and corporate ...
Across The Vast Reaches Of The 3D Stack: Mastering ESD Verification In Advanced Semiconductor Design
In the vast reaches of the semiconductor cosmos, a silent menace lurks—one that can obliterate years of design work in a fraction of a nanosecond. Electrostatic discharge (ESD) verification stands as ...
A National Taiwan University (NTU) student research paper won the semiconductor industry's prestigious IEDM's 2021 Roger A. Haken Best Student Paper Award, demonstrating capabilities of stacking eight ...
Morning Overview on MSN
China claims sub-1 nm transistor that cuts power use for AI chips
A team of Chinese researchers has built a ferroelectric transistor with a gate length of just 1 nanometer that runs on 0.6 ...
Successive versions of vertical transistors are emerging as the likely successor to finFETs, combining lower leakage with significant area reduction. A stacked nanosheet transistor, introduced at N3, ...
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