CHAMPAIGN, Ill. — A new type of transistor structure, invented by scientists at the University of Illinois at Urbana-Champaign, has broken the 600 gigahertz speed barrier. The goal of a terahertz ...

the scaling of silicon-based metal-oxide-semiconductor field-effect transistors (Si MOSFETs) and evolution of novel structure transistors in accordance with Moore’s Law, especially for modern ...

The structure it has invented is called Tri-Gate and will be first used in chips manufactured using the 22-nanometre process, nicknamed Ivy Bridge. Continuing along the path of Moore's Law would have ...

A diagram of a traditional “planar” transistor (left) compared to a “3D” transistor (right). [Photo: Intel] Intel has advanced its chip manufacturing technology with three-dimensional transistors that ...

At the VLSI Symposium being held this week in Kyoto, Japan, Renesas Technology Corp. announced it has developed what it calls an “extremely high-performance transistor technology” with low-cost ...

AUSTIN, Texas — Intel Corp. last week threw a box-like triple-gate transistor structure into the ring of contenders for ascendancy in the post-planar-CMOS era. While emphasizing that the tri-gate ...