IBM and Samsung have teased a new vertical transistor design "breakthrough" they reckon could transform the semiconductor industry and give Moore's Law a few years' more life. The companies hailed the ...

Gallium-nitride (GaN) power transistors have become an efficient and robust solution for modern power electronics for household and low-power industrial applications. The nature of GaN transistors’ ...

Commercial GaN power devices can’t handle voltages above about 600 volts, however, which limits their use. “Virtually all commercially available GaN power semiconductors are lateral devices,” says ...

IBM and Samsung claim they’ve made a breakthrough in semiconductor design. On day one of the IEDM conference in San Francisco, the two companies unveiled a new design for stacking transistors ...

Kioxia develops high-density 3D DRAM using stackable oxide-semiconductor transistors Eight-layer transistor stacks show reliable operation in laboratory demonstrations Oxide-semiconductor InGaZnO ...

Gallium-nitride (GaN) is becoming increasingly attractive in power electronics because the low switching losses of GaN enable high-frequency operation, which reduces the size of passive components ...

With the same electrical characteristics, such as breakdown voltage, on-resistance and maximum current, vertical conduction power devices based on gallium nitride require a smaller die surface than ...

(Nanowerk Spotlight) The seamless integration of electronic devices with living tissue remains one of the most significant challenges in bioelectronics. Traditional electronic components are rigid and ...

The handedness or “chirality” of electrons affects how current flows in graphene transistors, according to new work done by researchers in the UK and Russia. The team’s findings could help to make ...