To achieve this breakthrough, NTT applied its InP-based heterojunction bipolar transistor (InP HBT) technology1to improve the performance of amplifier ICs and package mounting technology to ...
High Electron Mobility Transistors (HEMTs) represent a pivotal class of devices in modern semiconductor technology, valued for their exceptional frequency performance and low noise characteristics.
Cryogenic low-noise amplifiers (LNAs) play a pivotal role in modern high-frequency electronic systems, where the reduction of thermal noise is critical for enhancing signal detection and fidelity.
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